Bosch’s Advancements in Silicon Carbide Technology
On September 16, during the 6th Automotive Semiconductor Ecosystem Conference 2026 hosted by Gasgoo, Wang Junyue, Senior Manager of Power Semiconductor Products and Global Head of Silicon Carbide (SiC) Data Center Business at Bosch, delivered a significant keynote. Here’s a summary of his presentation:
Key Insights:
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Technical Roadmap for SiC: Bosch has chosen the more complex trench technology for SiC chips over the simpler planar structure, emphasizing its advantages in total cost of ownership (TCO) and performance.
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Chip Advantage: Trench chips require less area to deliver higher current, allowing for more efficient designs. Bosch has been committed to trench technology since its SiC research began in 2002, leveraging extensive experience to refine its manufacturing processes.
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Production Milestones: Since starting mass production of SiC chips for automotive drive inverters in 2021, Bosch has shipped over 80 million chips without failures. Cumulative shipments of each module generation have surpassed 14 million units.
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Capacity Expansion: Bosch operates two 8-inch SiC wafer fabs in Germany and the U.S., with a third facility launching production by the end of this year. From 2024 to 2030, Bosch plans to increase its SiC capacity by 20 times to meet the rising demand, particularly from AI data centers (AIDCs).
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Future Developments: Bosch is currently producing its second-generation chips, with plans for a third generation in 2027 and further advancements slated for 2029 and 2031.
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AI Data Center Integration: The newly launched global AI data center business will utilize significant SiC capacity, especially for solid-state transformers, indicating a focus on complete SiC application solutions.
Conclusion
Bosch’s strategic investment in silicon carbide technology and AI data centers marks a significant progression in the automotive semiconductor landscape, prioritizing efficiency and next-gen applications.
